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ZXMC3A18DN8
P-channel
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Static
Drain-source breakdown
V (BR)DSS
-30
V
I D = -250 A, V GS =0V
voltage
Zero gate voltage drain current I DSS
-1.0
A
V DS = -30V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage V GS(th)
-1.0
V
I D = -250 A, V DS =V GS
Static drain-source on-state
resistance (*)
R DS(on)
0.035
0.050
W
V GS = -10V, I D = -4.8A
V GS = -4.5V, I D = -4.0A
Forward transconductance (*)(?) g fs
8.6
S
V DS = -15V, I D = -4.8A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
1603
434
388
pF
pF
pF
V DS = -15V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t d(on)
t r
t d(off)
t f
Q g
4.8
9.5
60
38
25
ns
ns
ns
ns
nC
V DD = -15V, I D = -1A
R G @ 6.0 , V GS = 10V
V DS = -15V, V GS = -5V
I D = -4.8A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
45
5.1
11.5
nC
nC
nC
V DS = -15V, V GS = -10V
I D = -4.8A
Source-drain diode
Diode forward voltage (*)
V SD
0.82
-0.95
V
T j =25°C, I S = -3.7
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
32.5
18.4
ns
nC
T j =25°C, I S = -2.2,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 2 - September 2007
? Zetex Semiconductors plc 2007
7
www.zetex.com
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